IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Monday Sessions
       Session SC+SS-MoA

Paper SC+SS-MoA7
Growth of Semiconductor (Si, Ge)/Insulator (CaF@sub 2@) Heterostructures on Si(111)

Monday, October 29, 2001, 4:00 pm, Room 122

Session: Semiconductor Surfaces
Presenter: A. Klust, Universität Hannover, Germany
Authors: A. Klust, Universität Hannover, Germany
M. Bierkandt, Universität Hannover, Germany
C. Deiter, Universität Hannover, Germany
J. Falta, Universität Bremen, Germany
M. Grimsehl, Universität Hannover, Germany
R. Feidenhansl, Riso National Laboratory
C. Kumpf, Riso National Laboratory
T. Schmidt, Universität Bremen, Germany
Y. Su, Universität Hamburg, Germany
J. Wollschläger, Universität Hannover, Germany
Correspondent: Click to Email
Silicon-fluorite superlattices exhibit strong photoluminescence at room temperature@footnote 1@. The origin of this novel behavior, not found in bulk silicon, may be electron confinement and/or interface effects. An important contribution to understanding these effects is detailed knowledge of the epitaxial semiconductor/insulator interface structure, which we find to be different for the Si-on-CaF@sub 2@ and CaF@sub 2@-on-Si interfaces. The CaF@sub 2@/Si(111) interface was investigated using x-ray standing wave (XSW) excited photoelectron spectroscopy (XPS). This combination exploits the large binding energy difference between interface and bulk emission to separately locate these sites relative to the Si substrate. The XSW results show that interface Ca atoms are well ordered even at growth temperatures as low as 370°C. Furthermore, we used surface x-ray diffraction (SXRD) to study growth of Si and Ge on thin CaF@sub 2@ films. In contrast to surfactant mediated growth of Si on CaF@sub 2@,@footnote 2@ Si films grown on pristine CaF@sub 2@ films exhibit the same crystallographic orientation as the CaF@sub 2@ film. For the CaF@sub 2@-on-Si interface, the orientation of the substrate and overlayer are rotated by 180° at growth temperatures used here. These differences in interface structure are attributed due to different interface reaction chemistry.@FootnoteText@ @footnote 1@F. Bassani et al., J. Appl. Phys. 79 (1996) 4066. @footnote 2@B. R. Schroeder et al.. Appl. Phys. Lett. 77 (2000) 1289.