IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Friday Sessions
       Session SC+SS-FrM

Paper SC+SS-FrM11
Surface Reaction Study of TaN Growth from MOCVD Precursors on Cu(111)

Friday, November 2, 2001, 11:40 am, Room 111

Session: Growth and Epitaxy of Semiconductors
Presenter: Y.W. Yang, Synchrotron Radiation Research Center, Taiwan
Authors: J.-B. Wu, National Chiao-Tung University, Taiwan
Y.W. Yang, Synchrotron Radiation Research Center, Taiwan
Y.-F. Lin, National Chiao-Tung University, Taiwan
H.-T. Chiu, National Chiao-Tung University, Taiwan
Correspondent: Click to Email
Understanding the reaction pathway followed by MOCVD precursors during thin film growth is a scientifically challenging problem. Transition metal nitride films, due to their wide applications in semiconductor processing, e.g., in areas like diffusion barrier materials, have been extensively studied. However, the knowledge about detailed surface nitride chemistry has been relatively scarce. Here, we report on surface reaction studies of TaN CVD precursors carried out by using high-resolution XPS, TDS, and NEXAFS techniques. The precursors studied include some custom-synthesized compounds (@supert@BuN)Ta(NEt@sub2@)@sub3@ and (@supert@BuN)Ta(NEtMe)@sub3@ that are characterized by the presence of absence of @beta@-methyl groups and by whether singly or doubly-bonded nitrogen being attached to a Ta atom. The @beta@-methyl group is known to influence the decomposition pathway of amido group, which in turn can determine the amount of carbon being incorporated into the films. XPS data show that the formation of nitride species starts at surface temperatures higher than 500 K and, as the reaction proceeds, graphic carbons are incorporated into TaN species and significant Ta oxides are formed due to favorable exothermicity. During the course of surface decomposition, multimass TDS data point to the evolution of hydrogen, hydrocarbon species, and possibly acetonitrile. Oxidation resistance and degree of carbon incorporation are found to vary with the precursors. Based on these results, possible reaction mechanisms and the effect of precursor are to be discussed.