IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Thursday Sessions
       Session SC+SS+EL-ThM

Paper SC+SS+EL-ThM2
In situ Measurements of the Stability of H terminated Si Surfaces and Kinetics of Oxide Regrowth in Ambient

Thursday, November 1, 2001, 8:40 am, Room 111

Session: Interaction of Hydrogen and Organics with Silicon
Presenter: V. Fomenko, University of Pittsburgh
Authors: V. Fomenko, University of Pittsburgh
D. Bodlaki, University of Pittsburgh
E. Borguet, University of Pittsburgh
Correspondent: Click to Email
The passivation of semiconductor surfaces is key to the operation of semiconductor devices. HF treatment removes native and deposited oxides from silicon. The resulting H-terminated surface is technologically and fundamentally important, and has been subject of a number of experimental and theoretical studies. H termination on Si surfaces has been considered to a stable in air at least for semiconductor wafer processing time scales. However, there is some disagreement as to the timescale of stability. In part this depends on the experimental probes. Using SHG, ellipsometry,contact angle, STM and AFM we have investigated the stability of the surface in ambient and under laser irradiation. in-situ second harmonic generation (SHG) experiments probe the oxide regrowth on hydrogen terminated Si(111) surfaces via SHG rotational anisotropy that is sensitive to hydrogen termination via changes the nonlinear optical response of the interface, both in the magnitude and shape of the SHG rotational anisotropy patterns. In addition, laser induced oxidation of H passivated Si(111) surfaces can be induced with intense ultrashort near IR laser pulses.