IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Nanotubes: Science and Applications Topical Conference Thursday Sessions
       Session NT+EL+NS-ThM

Paper NT+EL+NS-ThM2
Scanning Tunneling Microscopy and Spectroscopy of Gd@@C@sub 82@-filled Single-walled Carbon Nanotubes

Thursday, November 1, 2001, 8:40 am, Room 133

Session: Nanotubes: Growth, Functionalization, and Sensors
Presenter: H.J. Kim, Seoul National University, Korea
Authors: J. Lee, Seoul National University, Korea
J.-Y. Park, Cornell University
H.J. Kim, Seoul National University, Korea
H. Suh, Seoul National University, Korea
Y. Kuk, Seoul National University, Korea
H. Kato, Nagoya University, Japan
T. Okazaki, Nagoya University, Japan
H. Shinohara, Nagoya University, Japan
Correspondent: Click to Email
In this presentation we will show the atomic resolution STM images of single-walled carbon nanotubes filled with Gd@@C@sub 82@ metallofullerenes at ~7K. Atomic resolution images of Gd@@C@sub 82@-filled SWNTs with small tip bias voltages show nanometer-scale variations in topographic height and in atomic-scale corrugation pattern along the longitudinal axis of the nanotube. In the image with larger tip bias voltage of -1V, we could clearly observe the randomly oriented protrusions spaced roughly by integer multiples of 1.1nm which corresponds to the spacing between metallofullerenes in the nanotube. It is thought that the protrusions are caused by localized band-bending of the SWNT due to each Gd ion's field which is partially-screened by electrons in the encaging fullerene. Comparing images with different tip bias voltages, large DOS participating in the tunneling process, i.e. a large tip bias, might be needed to show enough spatial resolution. The scanning tunneling spectroscopy data of these nanotubes, which also show Gd-atom-induced local field-effect on the characteristic DOS features of SWNTs, will be presented. The possibility of 1-D Kondo effect due to the encapsulated Gd atoms will also be discussed.