IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Nanotubes: Science and Applications Topical Conference Friday Sessions
       Session NT+EL+NS-FrM

Paper NT+EL+NS-FrM9
Integrated Field Emission Devices with Single Carbon Nanofiber Cathodes

Friday, November 2, 2001, 11:00 am, Room 133

Session: Nanotubes: Field Emission
Presenter: M.A. Guillorn, Oak Ridge National Laboratory
Authors: M.A. Guillorn, Oak Ridge National Laboratory
V.I. Merkulov, Oak Ridge National Laboratory
A.V. Melechko, University of Tennessee
E.D. Ellis, University of Tennessee
G.J. Bordonaro, Cornell University
L.R. Baylor, Oak Ridge National Laboratory
J.H. Whealton, Oak Ridge National Laboratory
M.L. Simpson, Oak Ridge National Laboratory
D.H. Lowndes, Oak Ridge National Laboratory
Correspondent: Click to Email
The fabrication of robust integrated field emission (FE) devices is currently an area of intense research. FE devices require an electron source with a low threshold field and stable operating characteristics. Recently, we have focused on vertically aligned carbon nanofibers (VACNFs)@footnote 1@ as FE sources for these reasons.@footnote 2@ In this paper we will present field emission data on isolated VACNFs measured by a scanned probe technique and device performance of integrated gated cathode and triode structures that use a single VACNF as the FE element. Isolated high aspect ratio VACNFs were grown on Si substrates using a DC acetylene/ammonia PECVD process from catalyst sites defined with electron beam lithography (EBL). FE properties of individual VACNFs were measured with a scanned probe system capable of positioning a 1-micron diameter probe tip above an individual VACNF. Gated cathode and triode structures using individual VACNFs as FE elements were fabricated using a combination of traditional micro- and nanofabrication techniques.@footnote 3@ EBL was used to define the first layer of features consisting of catalyst sites for VACNF growth and alignment marks for subsequent photolithography steps. Alternating layers of PECVD silicon dioxide and metal were then deposited onto the substrate and patterned using photolithography creating electrostatic extractor and focus electrodes aligned with the catalyst site. The dielectric layers were reactive ion etched until the buried catalyst sites were released. To complete the devices the growth of the VACNF was performed as described above. The FE current from these devices was measured using a micro channel plate system. @FootnoteText@ @footnote 1@V.I. Merkulov, D.H. Lowndes, Y.Y. Wei, G. Eres, E. Voelkl, Appl. Phys. Lett., 76, 3555 (1999) @footnote 2@V.I. Merkulov, D.H. Lowndes, L.R. Baylor, J. Appl. Phys, 89, 1933 (2001) @footnote 3@M.A. Guillorn, V.I. Merkulov, G.J. Bordonaro, et al, J. Vac. Sci and Tech. B, 19, 573 (2001).