We report on the fabrication of two different configurations of integrally gated carbon nanotube field emitter arrays and the associated field emission. Local control of field emitter arrays, usually by gating, is necessary for most applications. Although several designs of gated carbon nanotube field emitter arrays, all based on a nanotube paste or slurry technology, have been demonstrated, to date no integrally-gated microfabricated carbon nanotube field emitter arrays based on in-situ-grown carbon nanotubes have been reported. We grew carbon nanotubes directly on gated cell structures in a cold-walled hot-filament CVD reactor at 650- 700 C using ammonia and acetylene or ethylene reactant gases and Ni or Fe catalysts. In one configuration, multi-walled carbon nanotubes with 20-30nm average diameter were grown on the tips of standard gated silicon tip-on-post field emitter arrays with 2.5 micron diameter gate apertures. Typical threshold voltages were less than 20V. For a 37 thousand cell array our highest collected anode current to date was 1.1 mA at a gate voltage of 41V. Stable emission even at 600 C has been obtained. Exposure to water vapor shifted the current-voltage curve to lower voltages, consistent with work of Dean and Chalamala@footnote 1@ on ungated single SWNT emitters. We also investigated electron energy distributions under various experimental conditions.@footnote 2@ In a second configuration, we grew multi-walled carbon nanotubes on the bottoms of hole structures with horizontal gate apertures having 1.5 - 2.5 micron diameters. Average emission currents up to 60 nA per cell with anode to gate current ratios greater than 10 have been measured. Economical manufacture of both configurations is projected because the first configuration does not require a sharp tip and the second requires only a much reduced number of steps. @FootnoteText@ @footnote 1@ K.A. Dean and B.R. Chalamala, App. Phys. Lett. 76, 375 (2000). @footnote 2@ J.L. Shaw and D.S.Y. Hsu, this proceedings.