Electrostatic force sensitive scanning probe microscopy (SPM) for quantitative imaging of dc and ac transport behavior of electrically active interfaces is presented. SPM is used to study transport properties of a metal-semiconductor junction and SrTiO@sub 3@ bicrystal grain boundary. Scanning Surface Potential Microscopy (SSPM) of laterally biased sample is used to quantify potential drops at the interface. Varying the lateral bias allows the voltage and I-V characteristics of the interface to be reconstructed. A novel scanning probe technique based on phase change of cantilever oscillations induced by a lateral bias applied to the sample is presented. This technique, further referred to as Scanning Impedance Microscopy (SIM), allows mapping of the local voltage phase angle and voltage oscillation amplitude in complex systems. The frequency dependence of the voltage phase angle shift across the interface allows interface capacitance and resistance to be determined locally. Quantitative agreement between metal-semiconductor junction capacitance obtained from SIM measurements and macroscopic impedance spectroscopy is demonstrated. Variation of the dc component of lateral bias in SIM allows reconstruction of the C-V characteristics of the junction. SSPM and SIM imaging of a SrTiO3 grain boundary has demonstrated the non-linear transport properties of the interface and identified a large density of interface states at the boundary. The combination of SSPM and SIM provides an approach for the quantitative analysis of local dc and ac transport properties from SPM data and provides spatially resolved impedance spectra of complex microstructures. Finally, the applicability of SIM to characterize complex polycrystalline materials will be demonstrated.