IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Nanometer Structures Thursday Sessions
       Session NS-ThP

Paper NS-ThP17
Scanning Spreading Resistance Microscopy of MOCVD Grown InP and GaAs Optoelectronic and Microelectronic Structures

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Poster Session
Presenter: St.J. Dixon-Warren, Nortel Networks, Canada
Authors: St.J. Dixon-Warren, Nortel Networks, Canada
G. Pakulski, Nortel Networks, Canada
A.J. SpringThorpe, Nortel Networks, Canada
G. Hillier, Nortel Networks, Canada
D. Macquistan, Nortel Networks, Canada
R. Streater, Nortel Networks, Canada
R.P. Lu, Simon Fraser University
K.L. Kavanagh, Simon Fraser University
Correspondent: Click to Email
Scanning spreading resistance microscopy (SSRM) is a new scanning probe microscopy technique that provides localized resistance profiling over a semiconductor surface. The technique, which is based on contact-mode atomic force microscopy (AFM), provides information on the two dimensional distribution of charge carriers and on the position of pn junctions in semiconductor structures. We have used SSRM to examine the cleaved edge of a number of MOCVD grown InP and GaAs optoelectronic and microelectronic structures, such as heterojunction bipolar transistors and buried heterojunction laser structures. We have also performed careful measurements on dopant staircase structures. Information on the spatial distribution of dopants in the epitaxial layers was obtained, and the effect of the applied tip voltage was investigated. We will also compare the SSRM results with those obtained using Scanning Capacitance Microscopy (SCM) on the same samples. Finally, we plan to report preliminary results for SSRM and SCM measurements for devices under operating bias conditions.