IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Nanometer Structures Wednesday Sessions
       Session NS+EL-WeA

Invited Paper NS+EL-WeA5
Epitaxial Growth of Self-Assembled Dots and Wires

Wednesday, October 31, 2001, 3:20 pm, Room 133

Session: Molecular Electronics and Patterning
Presenter: S. Williams, Hewlett-Packard Laboratories
Correspondent: Click to Email

Various structures with nanometer-scale dimensions can be grown on surfaces by taking advantage of lattice mismatch, crystal symmetry and surfactant species. This provides experimentalists with an array of control parameters to tune the size and shapes of the structures that form. The general principals for attaining this control will be illustrated for various types of Ge nano-islands on Si(001) and also for nano-wires of various silicides on Si(001).