IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Monday Sessions
       Session EL-MoM

Paper EL-MoM4
Low-temperature Process of (Y@sub 0.95@,Bi@sub 0.05@)MnO@sub 3@ Ferroelectric Thin Film and its Structural and Electrical Properties

Monday, October 29, 2001, 10:40 am, Room 130

Session: Ferroelectric
Presenter: T.J. Choi, Sung Kyun Kwan University, Korea
Authors: T.J. Choi, Sung Kyun Kwan University, Korea
Y.S. Kim, Sung Kyun Kwan University, Korea
J. Lee, Sung Kyun Kwan University, Korea
Correspondent: Click to Email
(Y@sub 0.95@,Bi@sub 0.05@)MnO@sub 3@ (YBM) on Pt and Y@sub 2@O@sub 3@ buffered Si (100) have been prepared by pulsed laser deposition. Addition of Bi in YMnO@sub 3@ enhanced crystallization of YMnO@sub 3@ thin films. The c-axis oriented YBM films have been obtained on Pt and Y@sub 2@O@sub 3@/Si at 700 °C, which is lower deposition temperature than that of typical YMnO@sub 3@ films. The processing conditions of depositing oxygen partial pressure and cooling atmosphere have affected crystallization behavior and electrical properties of YBM films. At low oxygen partial pressures, (111), (112) and c-axis oriented polycrystalline nature were observed. As the oxygen pressure increased, YBM films intended to grow with c-axis preferred orientation. YBM deposited in oxygen pressure of 100 mTorr was strongly oriented along the c-axis at the substrate temperature of 700 °C. YBM grown on Y@sub 2@O@sub 3@/Si had a hysteresis curve with a clockwise direction, which indicates that the C-V hysteresis curve is caused by ferroelectric polarization switching. The memory window was about 2 V at a sweep voltage of 8 V.