IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Wednesday Sessions
       Session EL+MI-WeM

Paper EL+MI-WeM11
Characterization of High Dose Mn, Fe and Ni Implantation into p-GaN

Wednesday, October 31, 2001, 11:40 am, Room 111

Session: Spintronics III: Ferromagnetic Semiconductors
Presenter: S.J. Pearton, University of Florida
Authors: S.J. Pearton, University of Florida
N. Theodoropoulou, University of Florida
A.F. Hebard, University of Florida
S.N.G. Chu, Bell Laboratories, Lucent Technologies
M.E. Overberg, University of Florida
C.R. Abernathy, University of Florida
R.G. Wilson, Consultant
J.M. Zavada, U. S. Army European Research Office, UK
Correspondent: Click to Email
High concentrations (3-5at.%) of Mn, Fe and Ni were incorporated into p-GaN by direct implantation at elevated substrate temperature (350°C). Subsequent annealing at 700°C produced apparent ferromagnetic behavior below ~175 K for the 3at.% Fe sample and ~100 K for the 5at.% Fe sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. For Mn-implantation, ferromagnetic contributions to the magnetization were observed below 250K in 3at.% samples. In this material, platelets consistent with the formation of GaMnN were observed by TEM. The direct implantation process appears promising for examining the properties of magnetic semiconductors with application to magnetotransport and magneto-optical devices.