| AVS 47th International Symposium | |
| Semiconductors | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SC+SS+EL-ThA1 Invited Paper Kinetics of GaN Growth and Decomposition D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, Naval Research Laboratory |
| 2:40pm | SC+SS+EL-ThA3 Carbonization of Si (111) by Gas Source Molecular Beam Epitaxy using Triethyl Gallium and Subsequent GaN Growth E. Kim, A. Tempez, A. Bensaoula, University of Houston |
| 3:00pm | SC+SS+EL-ThA4 Epitaxial III-V Nitride Growth on SiC(0001) by Means of A@super 3@@Sigma@@sub u@@super +@ Metastable Molecular Nitrogen D.C. Jordan, D.J. Smith, I.S.T. Tsong, R.B. Doak, Arizona State University |
| 3:20pm | SC+SS+EL-ThA5 Invited Paper Crystal Growth Kinetics and Transport in GaN Epitaxial Lateral Overgrowth M.E. Coltrin, C.C. Willan, M.E. Bartram, Sandia National Laboratories |
| 4:00pm | SC+SS+EL-ThA7 Thick GaN on Si Substrate by Hydride Vapor Phase Epitaxy using Epitaxial Lateral Overgrowth Technique J.W. Lee, J.B. Yoo, Sungkyunkwan University, Korea |
| 4:20pm | SC+SS+EL-ThA8 Growth and Electronic Structure of ScN, a New Refractory III-V Semiconductor D. Gall, I. Petrov, J.E. Greene, University of Illinois, Urbana |
| 4:40pm | SC+SS+EL-ThA9 Structure and Optical Properties of ScN(001) Grown by Molecular Beam Epitaxy H. Al-Brithen, A.R. Smith, W.M. Jadwisienczak, H.J. Lozykowski, Ohio University |
| 5:00pm | SC+SS+EL-ThA10 ScN Thin Films and Thin Film Devices X. Bai, M.E. Kordesch, Ohio University |