AVS 47th International Symposium
    Surface Science Monday Sessions
       Session SS2+NS+TF-MoM

Paper SS2+NS+TF-MoM2
Homoepitaxial Growth of Ni on Ni(110) : Surface with Anisotropic Diffusivity and Energy Barriers

Monday, October 2, 2000, 8:40 am, Room 209

Session: Nucleation and Growth
Presenter: B.-Y. Choi, Seoul National University, Korea
Authors: B.-Y. Choi, Seoul National University, Korea
S.-J. Kahng, University of Illinois at Urbana- Champaign
J.-Y. Park, Seoul National University, Korea
Y. Kuk, Seoul National University, Korea
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The homoepitaxial growth of Ni was studied on Ni(110) surface with scanning tunneling microscopy. The Ni(110) surface does not reveal surface reconstruction, but it has corrugated channels along the [1 -1 0] direction and the resultant surface diffusion anisotropy. Homoepitaxial islands grow with high aspect ratio, as large as 1:1000, due to i) the diffusion anisotropy and ii) the energy barrier from an [1 -1 0] side wall to an [001] side wall around the adatom islands. The aspect ratio of the islands decreases with increasing temperature. The competition between these two mechanism will be discussed. At the high coverage (@>=@10ML), the aspect ratio decreases substantially and the growth structure transforms to 3D islands without asymmetry. At these coverage, the surface roughness saturates. Although the microscopic origin is unclear, the phenomenon can be explained with a KPZ type equation with some modifications.