AVS 47th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP20
Scanning Tunneling Microscopy of Single-Crystal Si@sub 3@N@sub 4@ Layer Grown on Si(111) by Nitridation

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: C.-L. Wu, National Tsing-Hua University, Taiwan
Authors: C.-L. Wu, National Tsing-Hua University, Taiwan
H. Ahn, National Tsing-Hua University, Taiwan
Y.-C. Chou, National Tsing-Hua University, Taiwan
S. Gwo, National Tsing-Hua University, Taiwan
Correspondent: Click to Email
It has been known that ordered thin Si@sub 3@N@sub 4@ layer can be formed on Si(111) by exposing the Si surface to various nitrogen-containing gases (NH@sub 3@, NO, N, etc.) at high substrate temperatures. A variety of surface orderings ("8x8", "8/3x8/3", "4x4", and quadruplet) have been reported by previous studies using different surface-sensitive techniques, such as low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM), etc. However, until now there is no proposed structure model can satisfactorily incorporate all the observed features. In this work, by using high-resolution STM images at dual bias polarities in combination with Kikuchi electron holography (KEH), transmission electron microscopy (TEM), and ab initio total-energy calculations, we have determined an atomic model for this surface, which is capable of explaining the previously observed surface orderings.