AVS 47th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP15
The Secondary Electron Emission Characteristics for Sol-Gel Based SiO@sub2@ Thin Films

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: T. Jeong, Samsung Advanced Institute of Technology, Korea
Authors: T. Jeong, Samsung Advanced Institute of Technology, Korea
J. Lee, Samsung Advanced Institute of Technology, Korea
S. Yu, Samsung Advanced Institute of Technology, Korea
S. Jin, Samsung Advanced Institute of Technology, Korea
J. Heo, Samsung Advanced Institute of Technology, Korea
W. Yi, Samsung Advanced Institute of Technology, Korea
D. Jeon, Myongji University, Korea
J.M. Kim, Samsung Advanced Institute of Technology, Korea
Correspondent: Click to Email
We have fabricated SiO@sub2@ thin films by sol-gel method with six different tetraethyl orthosilicate (TEOS) molarities, which were 0.116 M, 0.058 M, 0.029 M, 0.015 M, and 0.007 M. Each solution of the different TEOS molarity was coated on the Si substrate by a spin coater. The SiO@sub2@ layer was formed on the substrate by thermal heating at 450°C for three hours. From Nanospec/AFT Model 200 the thickness of the SiO@sub2@ film decreased as the concentration of TEOS decreased; the thicknesses of SiO@sub2@ were estimated to be 69 nm, 36 nm, 16 nm, 11 nm, 9 nm, and 7 nm for 0.232, 0.116, 0.058, 0.029, 0.015, and 0.007 molarity of TEOS solution, respectively. Finally, we measured secondary electron emission (SEE) yields for these SiO@sub2@ thin layers by bombarding electrons in the vacuum chamber which was maintained at around 110-7 torr. It was observed that the 9 nm thick SiO@sub2@ film exhibits the highest SEE yield (about 4) among six samples. This observation agrees well with our previous results obtained from thermal SiO@sub2@ films. The higher SEE yields for sol-gel based SiO@sub2@ films than thermal SiO@sub2@ films suggest that the sol-gel method is useful for secondary electron emission layer formation. In conclusion, the solution based SiO@sub2@ layer coating method is promising, especially for secondary electron emission layer for the electron multiplying devices, due to high secondary electron emission yield and its easy application to a porous surface such as alumina.