Ta films deposited on Si(100), SiO@sub 2@, and Si@sub 3@N@sub 4@ surface during growth at different pressure and temperature were investigated using tapping mode Atomic Force Microscopy. The surface morphology of the films was found to depend on the subtrate surface, sputtering pressure and substrate temperature. Film stress and roughness of Ta/different substrate vs different deposition conditions were measured. The surface roughness of the films decreased with decreasing sputtering pressure and with increasing substrate temperature.