AVS 47th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP11
The Study of ITO Targets Produced at Various Temperatures

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.H. Choi, Samsung Advanced Institute of Technology, Korea
Authors: J.H. Choi, Samsung Advanced Institute of Technology, Korea
H. Choi, Samsung Advanced Institute of Technology, Korea
J.S. Lee, Samsung Advanced Institute of Technology, Korea
J.Y. Won, Samsung Advanced Institute of Technology, Korea
J.C. Lee, Samsung Advanced Institute of Technology, Korea
C.B. Lim, Samsung Advanced Institute of Technology, Korea
Correspondent: Click to Email
ITO targets were produced by annealing of mixed powder of 90 wt% In@sub 2@O@sub 3@ and 10 wt% SnO@sub 2@ at various temperatures. The products were investigated by using TEM/EELS, XRD, XPS, and AES. The XRD results show that the phases of In@sub 2@O@sub 3@ and SnO@sub 2@ remain unchanged until 1300°C annealing. Whereas only In@sub 2@O@sub 3@ phase appears over 1400°C annealing. Further experiments with TEM/EELS demonstrate that in fact the In@sub 2@O@sub 3@ over 1400°C annealing is Sn-doped In@sub 2@O@sub 3@ which is dominant phase and there is another phase which is Sn-rich In@sub 2@O@sub 3@ . As the annealing temperature increases, the grain size increases, but the phases still remain. And many small spots exist inside Sn-doped In@sub 2@O@sub 3@ grains. It is In@sub 2@O@sub 3@ which is not Sn-doped. It is thought that the content of SnO@sub 2@ is more than proper to achieve Sn-doped ITO target completely.