AVS 47th International Symposium
    Semiconductors Monday Sessions
       Session SC2+EL+SS-MoM

Paper SC2+EL+SS-MoM8
Effects of Hydrogen on the Properties of Cu(TMVS)(hfac) Sourced CVD Copper Films

Monday, October 2, 2000, 10:40 am, Room 312

Session: Dissimilar Materials
Presenter: J. Hong, Rensselaer Polytechnic Institute
Authors: J. Hong, Rensselaer Polytechnic Institute
D. Yang, Rensselaer Polytechnic Institute
S. Shetty, Rensselaer Polytechnic Institute
T.S. Cale, Rensselaer Polytechnic Institute
Correspondent: Click to Email
We describe a study of the effects of hydrogen pre- and post-treatment on films grown by Cu(TMVS)(hfac) sourced Cu CVD on TaN substrates using an LPCVD system. Our previous work@footnote 1,2@ showed that the use of water vapor as a co-reactant during Cu CVD can improve the adhesion between the copper film and the substrate. However, the resistivity and surface roughness of the deposited film were degraded when too much water vapor was introduced, probably due to the formation of Cu oxide. The hydrogen pretreatment is an attempt to reduce the native oxide layer on the TaN barrier layer. Films deposited on pretreated substrates have lower resistivity than those on untreated substrates. We have also studied the effects of hydrogen post-treatment on films grown with various amounts of water vapor as a co-reactant. Film properties depend on the duration of the water vapor flow, and the hydrogen post-treatment baking time and temperature. In all cases, resistivity was decreased after treatment compared to untreated films--an effect that we attribute to the reduction of Cu oxides formed in the film. The effect of hydrogen on the surface roughness depends on the amount of water vapor present during deposition and the length of the hydrogen treatment. We conclude that the resistivity of the Cu films is improved and surface roughness is changed with the use of hydrogen as pre- and post-treatment in Cu CVD process protocols. @FootnoteText@ @footnote 1@ D. Yang, J. Hong and T. S. Cale, in Proceedings of the Advanced Metallization Conference in 1999 (AMC 1999), "Effects of Process Variables on Cu(TMVS)(hfac) Sourced copper CVD films". @footnote 2@ D. Yang, J. Hong, and T. S. Cale, in MRS Symposium Proceedings of the MRS Spring 2000 Meeting, "Evolution of Surface Morphology During Cu(TMVS)(hfac) Sourced copper CVD films".