AVS 47th International Symposium
    Semiconductors Monday Sessions
       Session SC2+EL+SS-MoM

Paper SC2+EL+SS-MoM3
Growth of SiGe Alloys on Strain-Engineered Si on Insulator (SOI) Substrates

Monday, October 2, 2000, 9:00 am, Room 312

Session: Dissimilar Materials
Presenter: P. Rugheimer, University of Wisconsin, Madison
Authors: P. Rugheimer, University of Wisconsin, Madison
C.H. Lee, University of Wisconsin, Madison
D.E. Savage, University of Wisconsin, Madison
E. Mateeva, Colorado School of Mines
P. Moran, University of Wisconsin, Madison
A. Lal, University of Wisconsin, Madison
T.F. Kuech, University of Wisconsin, Madison
M.G. Lagally, University of Wisconsin, Madison
Correspondent: Click to Email
Self-organized 3D islands and misfit dislocations form in order to relieve strain during heteroepitaxial growth of SiGe on Si(001). In this work, we use patterned SOI substrates to mediate strain and influence film morphology. Films are grown, using both MBE and CVD, on lithographically defined mesas with lateral dimensions ranging from 2 to 20 microns patterned onto both 10nm Si on SiO2 bonded-wafer substrates and Si(001) control substrates. We have also grown epitaxial films on SOI substrates with MEMs type cantilevers etched on the surface. These cantilevers create regions of either tensile or compressive stress where epitaxial film growth takes place. Film morphology for the samples is followed in-situ during growth with RHEED and ex-situ post growth with X-ray diffraction, Atomic Force Microscopy (AFM) and Cross-sectional Transmission Electron Microscopy (CTEM). We find that growth on patterned mesas as well as cantilevers results in some elastic strain relaxation. Possible mechanisms, such as short-range viscous compliance, anisotropic strain relief, or mediation of dislocations, will be discussed. Supported by NSF-MRSEC and by ONR.