AVS 47th International Symposium
    Semiconductors Tuesday Sessions
       Session SC+EL+OF-TuA

Paper SC+EL+OF-TuA5
Structure of Cyclopentene Adsorbed on InP (001)-(2x1) Surface

Tuesday, October 3, 2000, 3:20 pm, Room 306

Session: Organic Chemistry on Semiconductor Surfaces
Presenter: Q. Fu, University of California, Los Angeles
Authors: Q. Fu, University of California, Los Angeles
C.H. Li, University of California, Los Angeles
D.C. Law, University of California, Los Angeles
M.J. Begarney, University of California, Los Angeles
R.F. Hicks, University of California, Los Angeles
Correspondent: Click to Email
It has been a growing interest in engineering ordered, defect free organic thin films on semiconductor substrates for the next generation miniature electronic devices. Using metalorganic vapor phase epitaxy, we have successfully grown indium phosphide (2x1) surface terminated with a complete layer of phosphorous dimers. On InP (2x1) surface, a dangling bond on each phosphorous dimer is filled with a single electron, which makes it an ideal substrate for growing organic films through reactions with @pi@-bond of unsaturated molecules. Here, we have characterized the molecular structure of cyclopentene adsorbed on the InP (2x1) surface by scanning tunneling microscopy, internal-reflectance infrared spectroscopy, reflectance difference spectroscopy, and molecular cluster calculations. It is found that the exposed phosphorous dimers are the adsorption sites for the unsaturated organic molecule. Two adsorption configurations were identified: one with the C@sub 5@H@sub 8@ molecule sitting on top of a P dimer, and another one with the C@sub 5@H@sub 8@ molecule bridging across two neighboring P dimers. At the meeting, we will present a comparison of cyclopentene adsorption characteristics on InP (001)-(2x1) versus Si (100)-(2x1).