AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Monday Sessions
       Session NS+NANO6-MoA

Paper NS+NANO6-MoA9
Artificial Surface Structure on H/Si(100)4x3-In Surface Using STM Tip

Monday, October 2, 2000, 4:40 pm, Room 302

Session: Manipulation of Atoms and Molecules
Presenter: O. Kubo, Osaka University, Japan
Authors: O. Kubo, Osaka University, Japan
T. Harada, Osaka University, Japan
T. Kobayashi, Osaka University, Japan
N. Yamaoka, Osaka University, Japan
M. Katayama, Osaka University, Japan
K. Oura, Osaka University, Japan
Correspondent: Click to Email
Scanning tunneling microscopy (STM) recently has considerable attention as an apparatus not only for observation of surface structures but also for manipulation of surface atoms. Since Lyding et al.@footnote 1@ reported about hydrogen (H) extraction from Si(100)2x1-H (monohydride) surface using STM tip, H extraction has been investigated both experimentally and theoretically. When superstructures on Si surface induced by metal (Ag, In, etc.) adsorption are exposed to atomic H, peculiar H terminated surface phases are induced. For instance, Si(100)4x3-In surface phase is produced by the deposition of 0.5ML In onto Si(100)2x1 surface at 400°C. When this surface is exposed to atomic H at 300°C, In atoms form clusters, and the reconstructed Si layer which have been formed under In layer is frozen by H termination of Si dangling bonds.@footnote 2@ This H terminated Si layer has monohydride dimer rows whose interval is 4a (a = 3.84 Å), and among the dimer rows, it has dihydride Si atoms (what we call Si(100)4x1-H). In this study, we have performed H extraction from the Si(100)4x1-H surface using STM tip. The H extraction could be performed by applying about 5 V of sample voltage and about 0.2 nA of tunneling current, which were almost the same condition for the H extraction from Si(100)2x1-H. After H extraction, the 4a periodicity of dimer rows was preserved and the H extracted area was observed higher than a surrounding H terminated surface as well as the extracted area on Si(100)2x1-H surface. This result means that peculiar Si surface structure can be formed artificially. The dimer rows consisted of buckled dimers in spite of room temperature observation contrary to the case on Si(100)2x1-H surface. It is most likely that these dimers were induced by surface stress as same as seen on step edges. @FootnoteText@ @footnote 1@ J.W. Lyding et al., J. Vac. Sci. Technol. B 12 (1994) 3735 @footnote 2@ J.T. Ryu et al., J. Vac. Sci. Technol. B 17 (1999) 983.