AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Tuesday Sessions
       Session NS+NANO6+SS+MC-TuA

Paper NS+NANO6+SS+MC-TuA10
Quantum Engineering of a Pb Nanostructure: Controlling the Thickness with Monolayer Precision

Tuesday, October 3, 2000, 5:00 pm, Room 302

Session: Self-assembly and Self-organization
Presenter: C.-S. Jiang, University of Texas at Austin
Authors: C.-S. Jiang, University of Texas at Austin
H.-B. Yu, University of Texas at Austin
X.-D. Wang, University of Texas at Austin
C.-K. Shih, University of Texas at Austin
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We report a novel quantum engineering of Pb mesas on Si(111), designing the quantum number (N) of the electron resonator of Pb by modifying its thickness with monolayer precision. Pb deposition on Si(111) forms mesas on the surface, and the mesas serve as electron resonators because of the strong quantization along the surface normal direction. To modify the mesas into desired thickness, mass-transfer was first triggered by an STM-tip under controlled conditions. The triggering lead to the formation of single layer with annular shape at the edge of the mesa by transferring the Pb mass from the wetting layer. Once triggered, the mass transfer from the wetting layer to the top of the mesa continue until the new layer involving millions of atoms is completed. Once this layer is completed, no more mass transfer is observed unless a new triggering is performed. Each triggering leads to addition of one complete monolayer on top of the plateau. Using this process, the Pb mesa thickness can be engineered in a quantized fashion. Detailed mechanisms involved in the engineering will be discussed.