AVS 47th International Symposium
    Nanotubes - Science and Applications Tuesday Sessions
       Session NM-TuP

Paper NM-TuP2
Selective Area Growth of Carbon Nanotubes on Glass Substrate

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.B. Yoo, Sungkyunkwan University, Korea
Authors: J.B. Yoo, Sungkyunkwan University, Korea
J.H. Han, Sungkyunkwan University, Korea
H.J. Kim, Sungkyunkwan University, Korea
W.S. Yang, Sungkyunkwan University, Korea
J.H. Yang, Sungkyunkwan University, Korea
C.Y. Park, Sungkyunkwan University, Korea
Correspondent: Click to Email
Carbon nanotubes have received considerable attention because of their own unique physical properties and many of potential applications. Selective area growth of carbon nanotubes is very important for the electronic device applications such as FED, TubeFET, SET, interconnects, sensor etc. In this study, selective area growth of vertically aligned carbon nanotubes was performed on nickel-coated glass and silicon (100) with and without buffer layer at temperatures below 600°C by hot filament plasma enhanced chemical vapor deposition (HFPECVD). The effects of growth parameters on the growth and emission characteristics of carbon nanotubes were investigated and compared to planar growth. Growth mechanism of selective area growth was proposed. The morphology of nanotubes was examined by field emission scanning electron microscopy (FESEM), and the microstructure of selective area growth of carbon nanotubes was investigated by high resolution transmission electron microscopy (HRTEM).