AVS 47th International Symposium
    Nanotubes - Science and Applications Tuesday Sessions
       Session NM-TuP

Paper NM-TuP1
Growth and Purification Characteristics of Isolated and Aligned Carbon Nanotubes

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: M. Kang, Hanyang University, Korea
Authors: M. Kang, Hanyang University, Korea
K. Ryu, Hanyang University, Korea
Y.C. Kim, Hanyang University, Korea
H. Jeon, Hanyang University, Korea
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Carbon nanotubes of the interesting applications is reported for display application, but neither industrial fabrication technology nor performance has been reported for practical display application. Therefore, we studied that carbon nanotubes (CNTs) were grown on nickel deposited glass substrates at low temperature (about 650°C) by plasma enhanced chemical vapor deposition (PECVD) method using a mixture of CH@sub 4@, NH@sub 3@, and H@sub 2@ gaseous sources. CH@sub 4@and H@sub 2@ were used as main reactant gases, and NH@sub 3@ was used as both dilution and nickel layer pretreatment source. Nickel layer with a thickness of several hundreds nm was deposited using ultra high vacuum (UHV) e-beam evaporator and pretreated with NH@sub 3@ plasma to form isolated nano size nickel island before CNTs deposition. Nickel catalyst thickness and NH@sub 3@ plasma treatment significantly affected CNTs microstructure and alignment. CNTs size was generally increased with increasing nickel thickness. Aligned@footnote 1,2@ and isolated CNTs with a typical dimension of a few hundreds nm in diameter and several @micro@m in length were observed. Post hydrogen and oxygen plasma treatments successfully eliminated carboneous impurities and nickel caps on CNTs. In this presentation, a comprehensive understanding of the effect of NH@sub 3@ plasma treatment on nickel catalyst layer and plasma purification processing will be described. We examined the properties of carbon nanotubes by SEM, XRD, Raman spectroscopy and TEM. @FootnoteText@ @footnote 1@ Synthetic Metals 108(2000) 159-163 @footnote 2@ Appl.Phys.Lett., Vol.75, No.8, 23 .