AVS 47th International Symposium
    Nanotubes - Science and Applications Monday Sessions
       Session NM+NS-MoA

Paper NM+NS-MoA8
Field Emission Properties of Vertically Aligned Carbon Nanotubes Dependent Upon Gas Exposures and Growth Conditions

Monday, October 2, 2000, 4:20 pm, Room 309

Session: Carbon Nanotubes: Nanoelectronics and Field Emission
Presenter: S.C Lim, Jeonbuk National University, Korea
Authors: S.C Lim, Jeonbuk National University, Korea
D.J. Bae, Jeonbuk National University, Korea
K.H. An, Jeonbuk National University, Korea
Y.C. Choi, Jeonbuk National University, Korea
H.J. Jeong, Jeonbuk National University, Korea
Y.H. Lee, Jeonbuk National University, Korea
Correspondent: Click to Email
Vertically aligned carbon nanotubes have been grown with different growth conditions by microwave plasma chemical vapor deposition and thermal chemical vapor deposition. The field emission properties of such grown carbon nanotubes are studied. Carbon nanotubes under high bias voltage are exposed to hydrogen, nitrogen, and oxygen. After each exposure, changes on turn-on volatage and slpoe of Fowler-Nordheim plots are observed. The saturation region of emission current at high bias voltage has been shifted. Degradation of field emission current from hydrogen and oxygen exposures has been observed. The ratio of change of emission current shows that oxygen exposure degrades the emission current more severely.