AVS 47th International Symposium
    Nanotubes - Science and Applications Monday Sessions
       Session NM+NS-MoA

Invited Paper NM+NS-MoA3
Electrical Transport in Carbon Nanotubes

Monday, October 2, 2000, 2:40 pm, Room 309

Session: Carbon Nanotubes: Nanoelectronics and Field Emission
Presenter: Ph. Avouris, IBM T.J. Watson Research Center
Authors: Ph. Avouris, IBM T.J. Watson Research Center
P.G. Collins, IBM T.J. Watson Research Center
R. Martel, IBM T.J. Watson Research Center
H.R. Shea, IBM T.J. Watson Research Center
H. Stahl, Physikalisches Institut, Germany
J. Appenzeller, Physikalisches Institut, Germany
Correspondent: Click to Email
We will discuss studies of the electronic structure and electrical transport properties of individual and ropes of single-wall (SW) and multi-wall (MW) carbon nanotubes (CNTs). Both metallic and semiconducting NTs have been investigated. In the case of metallic NTs we will present results on the observation and interpretation of negative magneto-resistance, weak localization, strong localization, anti-localization, and Coulomb blockade phenomena. In the case of semiconducting NTs, we have observed band-bending, field switching, carrier depletion and inversion phenomena. Some evidence for non-local transport at elevated temperatures in MWNTs will be discussed. In the case of SWNTs ropes we have been able to obtain results on the efficiency of inter-tube electrical transport. Finally, the operation and characteristics of model NT-based devices such as field-effect transistors, single-electron transistors and low-pass filters will be discussed.