AVS 47th International Symposium
    Magnetic Interfaces and Nanostructures Thursday Sessions
       Session MI-ThA

Paper MI-ThA2
Properties of GMR Multilayers Grown by RF Diode Sputtering

Thursday, October 5, 2000, 2:20 pm, Room 206

Session: Magnetic Devices: GMR & Tunneling
Presenter: W. Zou, University of Virginia
Authors: W. Zou, University of Virginia
X.W. Zhou, University of Virginia
R.A. Johnson, University of Virginia
H.N.G. Wadley, University of Virginia
D.J. Brownell, Nonvolatile Electronics, Inc.
D. Wang, Nonvolatile Electronics, Inc.
Correspondent: Click to Email
RF diode sputtering techniques are used for the growth of giant magnetoresistive (GMR) multilayers. The performance of devices synthesized in this manner is a sensitive function of the nanoscale structure and interfacial morphology created during the condensation step of the deposition process. Systematic series of experiments have been conducted to evaluate the dependence of film morphology upon composition of conducting layer. Atomic force microscopy (AFM) shows when CuAgAu is used (instead of pure Cu) the RMS roughness is reduced but occasional hillocks are also formed. By using a newly developed embedded atom method (EAM) alloy potential, a Molecular Dynamics study has been used to investigate the layer by layer growth phenomena and to identify the origin of the relationships between the experimental observations and layer composition. The use of the copper silver gold alloy is found to promote smoother interfaces because silver acts as a surfactant. Surface Auger results reveal the hillocks to be rich in silver a consequence of surface segregation into islands. Novel deposition strategies for morphology control have been proposed.