AVS 47th International Symposium
    Flat Panel Displays Tuesday Sessions
       Session FP-TuP

Paper FP-TuP7
Fabrication of a Microchannel Plate for a FED by Solution-based Multilayer Thin Film Coating

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: S. Yu, Samsung Advanced Institute of Technology, Korea
Authors: S. Yu, Samsung Advanced Institute of Technology, Korea
T. Jeong, Samsung Advanced Institute of Technology, Korea
J. Lee, Samsung Advanced Institute of Technology, Korea
S. Jin, Samsung Advanced Institute of Technology, Korea
W. Yi, Samsung Advanced Institute of Technology, Korea
J. Heo, Samsung Advanced Institute of Technology, Korea
J.M. Kim, Samsung Advanced Institute of Technology, Korea
Correspondent: Click to Email
To develop a high efficient field emission display (FED), a special microchannel plate (MCP) was incorporated in a FED, where field-emitted electrons are amplified in the cylindrical holes of a MCP by action of secondary electron emission from the emissive layer, and MCP characteristics are examined. We fabricated an alumina-based MCP with many micrometer-sized cylindrical holes by computerized punching and firing of the laminated alumina green sheet, where the aspect ratio of the hole was chosen to be around 13. Solution-based hybrid layer coating was utilized for MCP fabrication. Cu electroless coating was applied to a MCP, then Cu layer was oxidized to be a conductive layer on the surface of the hole. Tetraethyl orthosilicate (TEOS) containing solution was spin coated on the copper oxide layer. Consequent firing resulted in a SiO2 thin layer as an emissive layer. Then electrodes on the two faces of a MCP were deposited by an e-beam evaporator. To optimize the MCP fabrication process, we followed the design of experiment (DOE) scheme. We chose three DOE factors: Cu layer thickness controlled by the Cu electroless coating time (10 and 15 minutes), Cu oxidation temperature (570, 800, and 1030 C), and TEOS concentration (0.015 M and 0.007 M) for SiO2 layer thickness. We measured the current amplifying gain of our MCP by an e-gun. The highest gain was obtained to be about 10 for the sample with 15 min Cu coating time, 1030 C oxidation temperature, and 0.007 M TEOS concentration, where this gain will be beneficial for a new kind of FED by increasing the intensity of cathodoluminescence. Further experiments by varying other experimental factors are undergoing, and good results are expected.