AVS 47th International Symposium
    Flat Panel Displays Tuesday Sessions
       Session FP-TuP

Paper FP-TuP6
Characterization of Radio Frequency Magnetron Sputter-deposited Ga@sub 2@O@sub 3@:Mn Phosphors of Thin Film Electroluminescent Display Devices

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.H. Kim, University of Florida
Authors: J.S. Lewis, University of Florida
J.H. Kim, University of Florida
P.H. Holloway, University of Florida
Correspondent: Click to Email
Manganese-activated Ga@sub 2@O@sub 3@ phosphor thin films as the emitting layer of alternating current thin film electroluminescent (ACTFEL) display devices have been prepared by radio frequency (rf) magnetron sputtering of a Mn-doped Ga@sub 2@O@sub 3@ target in a pure argon or an oxygen-argon mixture atmosphere. The structural and compositional properties of the deposited Ga@sub 2@O@sub 3@:Mn phosphor thin films have been systematically investigated as a function of the sputter deposition parameters, such as rf power, working pressure, oxygen gas concentration, and substrate temperature ranging 5 - 50 W, 5 - 30 mTorr, 0 - 50 %, and room temperature - 400 °C, respectively. The surface morphology, structure, and composition of the deposited Ga@sub 2@O@sub 3@:Mn films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersive X-ray spectroscopy (EDS). Their electroluminescent and photoluminescent characteristics were also evaluated and correlated with the results of the structural and compositional analyses. The ACTFEL display devices were fabricated using the conventional structure, Al/BTO/Ga@sub 2@O@sub 3@:Mn/ATO/ITO/glass, and the inverted structure, ITO/BTO/Ga@sub 2@O@sub 3@:Mn/PZT/Au/Al@sub 2@O@sub 3@.