AVS 47th International Symposium
    Flat Panel Displays Tuesday Sessions
       Session FP-TuP

Paper FP-TuP3
Fabrication of a Planar Field Emitter Array on the Diamond Like Carbon Layer

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: D.H. Lee, Sungkyunkwan University, Korea
Authors: D.H. Lee, Sungkyunkwan University, Korea
D.W. Kim, Sungkyunkwan University, Korea
S.I. Kim, Skion Corporation, Korea
G.Y. Yeom, Sungkyunkwan University, Korea
Correspondent: Click to Email
Diamondlike carbon(DLC) based field emitters can be practically important in the fabrication of field emission display not only due to the properties possessed by diamond such as electronegativity, thermal stability, mechanical hardness, and chemical inertness but also due to the possibility of low temperature deposition and large area deposition. In this study, a novel DLC-based field emission device based on a planar field emitter has been designed and fabricated and its electrical properties were investigated. To maximize the field emission of the planar type field emitter, the shape and dimension of the device were simulated using a simulation tool. The deposition technique of DLC layer is very important because it can vary the emission properties of the fabricated DLC field emitter. To obtain desirable properties of DLC layer, a novel Cs ion assisted magnetron sputtering deposition technique developed by SKION Inc. was used to deposit the DLC layer at room temperature. The room temperature deposited DLC layer showed mechanical and electrical properties close to diamond The fabricated planar type DLC-based field emission device was consisted of DLC/bottom electrode/insulator/top electrode. The bottom electrode has a circular opening to expose the field emitting DLC layer. The slope of the bottom electrode opening, the thickness of the insulator layer, and the opening of the top electrode in addition to their materials were optimized to obtain a stable FED structure and the necessary electric field for electron emission and convergence of the electron beam. Details of the fabrication techniques and the electrical properties of the fabricated field emission devices will be discussed. Also, the properties of DLC layer deposited by Cs ion assisted magnetron sputtering will be also discussed.