AVS 47th International Symposium
    Flat Panel Displays Monday Sessions
       Session FP-MoA

Paper FP-MoA5
Low Temperature Deposition and Characterization of Polycrystalline Si Films

Monday, October 2, 2000, 3:20 pm, Room 313

Session: Flexible Displays
Presenter: S.I. Shah, University of Delaware
Authors: S.I. Shah, University of Delaware
K. Xu, University of Delaware
D. Guerin, University of Delaware
Correspondent: Click to Email
Polycrystalline silicon (poly-Si) thin films were deposited by dc magnetron sputtering at temperatures as low as 150°C on poly(ethyleneterephthalate) (PET) and glass cover slips. Film growth was studied as a function of the partial pressures of argon, hydrogen and krypton and different substrate bias conditions. X-ray diffraction analyses showed that films grown with a gas ratio (Ar: Kr: H@sub2@ = 17:2:1) were polycrystalline. The crystallinity of the films was also dependent on the applied substrate bias. Both the dc bias and the partial pressure of Kr enhanced the adatom mobilities leading to a crystalline film formation. The substrate bias, however, had a critical limit beyond which the crystallinity of the films again decreased. X-ray photoelectron spectroscopy (XPS) depth profiles indicated intermixing at the film-substrate interface. The intermixing was strongly dependent on the ion bombardment due to the substrate bias. We will present TRIM models to explain the effects of both the H and Kr addition to the sputtering gas.