AVS 47th International Symposium
    Flat Panel Displays Tuesday Sessions
       Session FP+VT-TuA

Paper FP+VT-TuA10
Oxide Phosphor TFEL Devices Fabricated by Magnetron Sputtering with RTA

Tuesday, October 3, 2000, 5:00 pm, Room 313

Session: Emissive Displays and Device Reliability
Presenter: T. Minami, Kanazawa Institute of Technology, Japan
Authors: T. Minami, Kanazawa Institute of Technology, Japan
H. Toda, Kanazawa Institute of Technology, Japan
T. Miyata, Kanazawa Institute of Technology, Japan
Correspondent: Click to Email
High luminance thin-film electroluminescent (TFEL) devices using various oxide phosphor thin films have been recently reported. However, a high luminance could only be obtained in these TFEL devices by postannealing in various atmospheres at high temperatures about 1000@super o@C. In this paper, we describe a procedure for producing high luminance TFEL devices with an oxide phosphor thin-film emitting layer prepared without high temperature postannealing: magnetron sputtering with rapid thermal annealing (RTA). TFEL devices were fabricated by depositing oxide phosphor thin films onto thick sintered BaTiO@sub 3@ insulating ceramic sheets. A Ga@sub 2@O@sub 3@:Mn or ZnGa@sub 2@O@sub 4@:Mn thin film was deposited by r.f. magnetron sputtering onto a substrate mounted on a rotating platform; a thin film was deposited onto the substrate when it passed over the target, and subsequently, RTA was performed on the deposited film when it passed over the halogen lamps. The sputter deposition under a platform rotation of 1-2 r.p.m. was carried out in an Ar+O@sub 2@ sputter gas atmosphere at pressures of 0.2-8 Pa with an rf power of 120 W. High luminance green emissions were obtained in TFEL devices using either a Ga@sub 2@O@sub 3@:Mn or a ZnGa@sub 2@O@sub 4@:Mn thin-film emitting layer prepared without postannealing at high temperatures under optimized deposition conditions. The Ga@sub 2@O@sub 3@:Mn and ZnGa@sub 2@O@sub 4@:Mn TFEL devices driven by a sinusoidal wave voltage at 1 kHz exhibited luminances of 24 and 200 cd/m@super 2@, respectively.