AVS 47th International Symposium
    Electronics Tuesday Sessions
       Session EL+NS-TuA

Paper EL+NS-TuA6
A Novel Scheme for the Fabrication of Ultra-short Metal-oxide-semiconductor Field-effect Transistors

Tuesday, October 3, 2000, 3:40 pm, Room 312

Session: Nanoelectronics
Presenter: R. Martel, IBM T.J. Watson Research Center
Authors: R. Martel, IBM T.J. Watson Research Center
J. Appenzeller, Physikalisches Institut, RWTH Aachen, Germany
J. Knoch, Physikalisches Institut, RWTH Aachen, Germany
K. Chan, IBM T.J. Watson Research Center
M. Tanner, University of California, Los Angeles
S. Thomas, University of California, Los Angeles
K.L. Wang, University of California, Los Angeles
Ph. Avouris, IBM T.J. Watson Research Center
J.A. del Alamo, Massachusetts Institute of Technology
P. Solomon, IBM T.J. Watson Research Center
Correspondent: Click to Email
We present a novel scheme for the fabrication of ultra-short channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography (proximal probe or e-beam) and molecular beam epitaxy (MBE). The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of a n@super ++@-layer grown on a silicon on insulator (SOI) wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10nm. Measurements on the first batches of n-MOSFET devices fabricated with this new approach will be presented. They show very good output characteristics and good control of the short channel effects. The combination of highly doped contact areas (n@super ++@ 1x10@super 20@cm@super -3@) with a nominally undoped channel region (p@super -@ 5x10@super 14@cm@super -3@) is now being explored further to keep the parasitic resistances low and possibly achieve ballistic transport at room temperature.