AVS 47th International Symposium
    Electronics Tuesday Sessions
       Session EL+NS-TuA

Paper EL+NS-TuA5
Coulomb Blockade Devices Fabricated by AFM-manipulation of Nanoparticles

Tuesday, October 3, 2000, 3:20 pm, Room 312

Session: Nanoelectronics
Presenter: L. Samuelson, Lund University, Sweden
Authors: S. Carlsson, Lund University, Sweden
T. Junno, Lund University, Sweden
H. Xu, Lund University, Sweden
L. Samuelson, Lund University, Sweden
Correspondent: Click to Email
We report successful fabrication of Coulomb blockade devices obtained by manipulation of pre-fabricated nanoparticles, using an atomic force microscope (AFM) as a nano-engineering tool. This approach, together with in-situ electrical measurements during manipulation, allows the formation of tunnel gaps with accuracy on the Ångstrom scale. Three-terminal single-electron transistors (SETs) with ideal electrical characteristics are obtained, demonstrating Coulomb blockade as well as Coulomb staircase in the I-V characteristics, and with hundreds of current oscillations as function of gate voltage. Furthermore, we have built double-island structures with three gaps trimmed to tunneling dimensions and with two addressing gates, allowing control of the charge distribution, or polarization, of these two-atom artificial molecule objects.