AVS 47th International Symposium
    Electronics Tuesday Sessions
       Session EL+NS-TuA

Invited Paper EL+NS-TuA1
Nano-switches Using Vacuum Nano-electronics and Superconducting Weak Links

Tuesday, October 3, 2000, 2:00 pm, Room 312

Session: Nanoelectronics
Presenter: D.G. Hasko, Cambridge University, UK
Correspondent: Click to Email

New physical principles influence device operation when size is reduced to the nanometre range Recent research has lead to two types of switching devices; vacuum nanoelectronic (VNE) and superconducting switches have been described and are reviewed in this paper. Conventional vacuum microelectronics exploits cold field emission of electrons in devices made by microcircuit fabrication techniques but requires UHV vacuum operating conditions. By reducing the field emission tip radius and the tip-extractor electrode spacing a new class of VNE devices may be operated at lower voltages and with improved stability. Tips of nanometre size also show much smaller angular spreads and reduced energy spread. Diode and triode devices, with electron transport path length of ~100nm (shorter than the mean free path in air) were fabricated and their electrical characteristics reported. Hot phonon injection from an electrically isolated heater has demonstrated effective switching behaviour in Nb weak link junctions and is of great interest for high speed and quantum effect circuit functions. This method isolates the control circuit from the weak link and has demonstrated significant device gain in contrast to previous device structures.