AVS 46th International Symposium
    Thin Films Division Monday Sessions

Session TF-MoM
Fundamentals of PECVD

Monday, October 25, 1999, 8:20 am, Room 615
Moderator: M.C.M. van de Sanden, Eindhoven University of Technology


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am TF-MoM1
Investigation of the Plasma Properties and Fluxes in a Hydrogenated Amorphous Carbon Deposition Process
B.K. Kim, T.A. Grotjohn, Michigan State University
8:40am TF-MoM2
Time-resolved Study of C@sub x@N@sub y@ Growth by Means of Fourier Transform Infrared Reflection Spectroscopy
A. de Graaf, B. Schreur, M.C.M. van de Sanden, D.C. Schram, Eindhoven University of Technology, The Netherlands
9:00am TF-MoM3 Invited Paper
Surface Reactions of CH@sub x@ and SiH@sub x@ Radicals during Plasma Deposition of a-C:H and a-Si:H Films
A. von Keudell, Max-Planck-Institut für Plasmaphysik, Germany
9:40am TF-MoM5
Quantitative Characterization of a Particle Beam Source for Atomic Hydrogen and Hydrocarbon Radicals for Thin Film Growth Studies
Th. Schwarz-Selinger, A. von Keudell, W. Jacob, Max-Planck-Institut für Plasmaphysik, Germany
10:00am TF-MoM6
High Rate a-Si:H Growth Studied by in situ Ellipsometry
A.H.M. Smets, B.A. Korevaar, W.M.M. Kessels, M.C.M. van de Sanden, D.C. Schram, Eindhoven University of Technology, The Netherlands
10:20am TF-MoM7
Ab-initio Study of H Abstraction from Amorphous Silicon Surface By Hydrogen and silyl(SiH@sub 3@) Radicals: Implications for Stability of 3-center Bond Formation
A. Gupta, H. Yang, G.N. Parsons, North Carolina State University
10:40am TF-MoM8
Impact of Helium Dilution on Low-Temperature Silicon Depositions Using Electron Cyclotron Resonance and RF Plasma Sources
S.H. Bae, Y.C. Lee, R.T. McGrath, Pennsylvania State University
11:00am TF-MoM9
Hydrogenated Amorphous Silicon Surface Growth Mechanism Characterized by Fourier Analysis of the Surface Topography
K.R. Bray, A. Gupta, L. Smith, G.N. Parsons, North Carolina State University
11:20am TF-MoM10
Deposition of Silicon Oxide Films using a Remote Thermal Plasma
M.C.M. van de Sanden, M.F.A.M. van Hest, D.C. Schram, Eindhoven University of Technology, The Netherlands
11:40am TF-MoM11
Dielectric Properties of Silicon Nitride Deposited by High Density Plasma Enhanced Chemical Vapor Deposition@footnote 1@
J.B.O. Caughman, D.B. Beach, G.E. Jellison, W.L. Gardner, Oak Ridge National Laboratory