| AVS 46th International Symposium | |
| Surface Science Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SS2+EM-TuA1 Invited Paper Medard W. Welch Award Address: Halogen Etching of Si with Emphasis on Atomic-Scale Processes J.H. Weaver, University of Minnesota |
| 2:40pm | SS2+EM-TuA3 Micrometer-scale "Grooves" and Step Bunching during Extended Oxidation-induced Etching of Si(001) Surfaces J.F. Nielsen, The Ohio State University, M.S. Pettersen, Otterbein College, J.P. Pelz, The Ohio State University |
| 3:00pm | SS2+EM-TuA4 The Structure of Steps on Hydrogen-Passivated Si Surfaces A. Laracuente, L.J. Whitman, Naval Research Laboratory |
| 3:20pm | SS2+EM-TuA5 Microscopy of Si(001) Surface Defects Produced by keV He Ion Irradiation at Low Temperatures K. Kyuno, D.G. Cahill, R.S. Averback, University of Illinois, Urbana-Champaign, J. Tarus, K. Nordlund, University of Helsinki, Finland |
| 3:40pm | SS2+EM-TuA6 A Variable Temperature Scanning Tunnelling Microscopy Study of Si(100) Etching Dynamics C.F. Herrmann, J.J. Boland, University of North Carolina |
| 4:00pm | SS2+EM-TuA7 Dissociative Adsorption and Recombinative Desorption of H2 on Si(100)-2x1 F.M. Zimmermann, X. Pan, Rutgers University |
| 4:20pm | SS2+EM-TuA8 Novel Mechanisms for Plasma Etch Front and CVD (Chemical Vapor Deposition) Growth Front Roughening Y.-P. Zhao, J.T. Drotar, G.-C. Wang, T.-M. Lu, Rensselaer Polytechnic Institute |
| 4:40pm | SS2+EM-TuA9 Resonance-Enhanced Multiphoton Ionization Studies of the Etching of Silicon by Molecular Chlorine T.A. Barckholtz, L. McDonough, S.R. Leone, University of Colorado, Boulder |
| 5:00pm | SS2+EM-TuA10 Femtosecond Photo-induced Dynamics on a Cleaned and a Chlorinated Si(111) Surfaces S. Haraichi, F. Sasaki, Electrotechnical Laboratory, Japan |