| AVS 46th International Symposium | |
| Surface Science Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SS2+EM+NS-ThM1 Evolving Surface Morphology: An In Situ STM Study of 2-20 nm SiGe Quantum Wells Grown on 75 mm Si (100) Wafers G.G. Jernigan, P.E. Thompson, Naval Research Laboratory |
| 8:40am | SS2+EM+NS-ThM2 Hydrogen-Mediated Surface Morphological Evolution in Si@sub 0.7@Ge@sub 0.3@/Si(001) Layers Grown by Hydride Gas-source Molecular Beam Epitaxy T. Spila, P. Desjardins, H. Kim, N. Taylor, D.G. Cahill, J.E. Greene, University of Illinois, Urbana, S. Guillon, R.A. Masut, Ecole Polytechnique de Montréal, Canada |
| 9:00am | SS2+EM+NS-ThM3 Interdiffusion During Growth of Ge on Si(100) H. Jonsson, B.P. Uberuaga, M. Leskovar, B.R. Schroeder, S. Meng, M.A. Olmstead, University of Washington |
| 9:20am | SS2+EM+NS-ThM4 Confined Intermixing of Ge and Si S.-J. Kahng, Seoul National University, Korea, Y.H. Ha, D.W. Moon, Korea Research Institute of Standards and Science, Korea, Y. Kuk, Seoul National University, Korea |
| 9:40am | SS2+EM+NS-ThM5 Surface Segregation and Surface Reactivity in Heteroepitaxial Vapor Phase Thin Film Growth: Si@sub 1-x@Ge@sub x@ on Si(111) Y.-J. Zheng, A.M. Lam, J.R. Engstrom, Cornell University |
| 10:00am | SS2+EM+NS-ThM6 The Role of Arsenic Surfactant in the Growth of Germanium Thin Films on Si(100) Surfaces C.L. Berrie, J. Bright, S.R. Leone, University of Colorado, Boulder |
| 10:20am | SS2+EM+NS-ThM7 Invited Paper The Dynamics of the Si(111) (7x7) to (1x1) Phase Transition Investigated by Low Energy Electron Microscopy J.B. Hannon, Carnegie Mellon University |
| 11:00am | SS2+EM+NS-ThM9 The Motion of Atomic Steps on Ultra-Flat Si(111) P. Finnie, Y. Homma, NTT Basic Research Laboratories, Japan |
| 11:20am | SS2+EM+NS-ThM10 Novel Growth Behavior of Ge on Pb Covered Si(111) Surface I.S. Huang, T.C. Chang, T. Tsong, Academia Sinica, ROC |
| 11:40am | SS2+EM+NS-ThM11 The Growth of High Density, Small Ag Islands at the Si(111)7x7 Surfaces with Adatom Defects H. Hirayama, H. Okamoto, K. Takayanagi, Tokyo Institute of Technology, Japan |