| AVS 46th International Symposium | |
| Manufacturing Science and Technology Group | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-MoA1 Invited Paper Highly Reliable Ultra Thin Gate Oxide Grown using Water Vapor Generator O. Nakamura, T. Ohkawa, M. Nakagawa, Y. Shirai, Tohoku University, Japan, K. Kawada, N. Ikeda, Y. Minami, A. Morimoto, Fujikin Incorporated, Japan, T. Ohmi, Tohoku University, Japan |
| 2:40pm | MS-MoA3 High-integrity Ultra-thin Silicon Nitride Film Grown by Plasma Nitridation of Silicon Surface at Low-temperature for Giga Scale Devices K. Sekine, Y. Saito, M. Hirayama, T. Ohmi, Tohoku University, Japan |
| 3:00pm | MS-MoA4 Generation of Positively Charged Particles at an Anode and Transport to Device-wafers in a Real rf-plasma Etching Chamber for Tungsten Etch-back Process T. Moriya, N. Ito, F. Uesugi, NEC Corporation, Japan, Y. Hayashi, K. Okamura, NEC Kyushu, Ltd., Japan |
| 3:20pm | MS-MoA5 Standardization of the Method to a Moisture Concentration in Hydrogen Chloride Gas with Diode Laser Absorption Spectrometry Y. Ishihara, UC Standardization Committee, Japan, Y. Sakakibara, NTT Advance Technology Corporation, Japan, Y. Kunii, Kokusai Electric Co., Ltd., Japan, K. Hasumi, Hitachi Tokyo Electronics Co., Ltd., Japan, I. Matsuda, Showa Denko K.K., Japan, N. Miki, Ultraclean Technology Research Institute, Japan, A. Ohki, Oosaka Sanso Kogyo Ltd., Japan, Y. Shirai, Tohoku University, Japan |
| 3:40pm | MS-MoA6 Gas Distribution System Using an Advanced Flow Controller M. Nagase, O. Nakamura, M. Kitano, Y. Shirai, T. Ohmi, Tohoku University, Japan |
| 4:00pm | MS-MoA7 Investigating Molecular Contamination in Cleanrooms P.H. Schnabel, G. Goodman, Charles Evans & Associates, D. Nehrkorn, M. Kendall, Surface Science Laboratories, G. Strossman, P. Lindley, Charles Evans & Associates |
| 4:20pm | MS-MoA8 Minimizing Particle Generating Contamination in Polysilicon LPCVD J. Krueger, Texas Instruments Incorporated, J. Snow, J. Hardin, J. Gratz, Millipore Corporation |
| 4:40pm | MS-MoA9 Highly Concentrated Ozone Gas Supplied at Atmospheric Pressure Condition as a New Oxidizing Reagent for the Formation of SiO@sub 2@ Thin Film on Si K. Koike, Iwatani International Corporation, Japan, S. Ichimura, A. Kurokawa, K. Nakamura, Electrotechnical Laboratory, Japan |
| 5:00pm | MS-MoA10 A Comparison of VPD, TXRF, and Surface SIMS to Detect Fe, Ni, Cu, and Al on Silicon Wafers V.K.F. Chia, J. Metz, M.J. Edgell, Charles Evans & Associates |