| AVS 46th International Symposium | |
| Nanometer-scale Science and Technology Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | MS+PS-FrM1 Effect of CH@sub 3@F/C@sub 4@F@sub 8@ Ratio on the SiO@sub 2@-to-Si@sub 3@N@sub 4@ Selectivity in a Self-Aligned-Contact Etching Process for Giga-bit DRAM S.C. Park, J.S. Kim, J.J. Lee, K.T. Kim, D.D. Lee, Y.S. Seol, I.H. Choi, Hyundai Electronics Industries Co. Ltd., Korea |
| 8:40am | MS+PS-FrM2 Plasma Cleaning of Via Bottoms Following Dielectric Etching P.J. Matsuo, M. Schaepkens, G.S. Oehrlein, State University of New York at Albany |
| 9:00am | MS+PS-FrM3 Molecular Dynamics Simulations of Fluorocarbon Films J. Tanaka, Hitachi, Ltd., Japan, C.F. Abrams, D.B. Graves, University of California, Berkeley |
| 9:20am | MS+PS-FrM4 Plasma-Induced Roughening of Resist S. Halle, W.H. Yan, W. Moreau, IBM Microelectronics, J. Wittmann, A. Gutmann, Infineon Technologies |
| 9:40am | MS+PS-FrM5 Measurement of Residual Fluorine in a Polysilicon Etch Reactor with Fourier Transform Infrared Spectroscopy (FTIR) J.E. Daugherty, E. Edelberg, V. Vahedi, A. Perry, J. Huang, R. Marsh, Lam Research Corporation |
| 10:00am | MS+PS-FrM6 Effect of W Reaction Byproducts on W/poly-Si Stack Gate Etching Process H. Morioka, M. Nakaishi, N. Abe, Fujitsu Limited, Japan |
| 10:20am | MS+PS-FrM7 Vacuum- and Near-Ultraviolet Spectra of Plasma Etching Discharges J.R. Woodworth, T.W. Hamilton, B.P. Aragon, Sandia National Laboratories |
| 10:40am | MS+PS-FrM8 Etching of Organic Low Dielectric Constant Materials on the Lam Research 4520XLE C. Janowiak, S.L. Ellingboe, J. Flanner, I. Morey, Lam Research Corporation |