| AVS 46th International Symposium | |
| Electronic Materials and Processing Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM-MoM1 Invited Paper GaN Growth Chemistry, System Design and Materials Properties T.F. Kuech, J. Sun, L. Zhang, University of Wisconsin, Madison, J.M. Redwing, Epitronics |
| 9:00am | EM-MoM3 Mechanisms for Lateral Growth and Coalescence in GaN CVD M.E. Bartram, M.E. Coltrin, J. Han, C.C. Willan, Sandia National Laboratories |
| 9:20am | EM-MoM4 Selective Area Growth of GaN on Si by Chemical Beam Epitaxy E. Kim, A. Tempez, N. Medelci, I.E. Berishev, A. Bensaoula, University of Houston |
| 9:40am | EM-MoM5 Invited Paper The Role of Extended Defects in the Physical Properties of GaN and its Alloys J.S. Speck, University of California, Santa Barbara |
| 10:20am | EM-MoM7 Growth Kinetics of GaN(0001) as Grown by MBE@footnote1@ A. Parkhomovsky, S.M. Seutter, B.E. Ishaug, A.M. Dabiran, P.I. Cohen, University of Minnesota, S. Keller, S.P. DenBaars, University of California, Santa Barbara |
| 10:40am | EM-MoM8 Dissociation of Al@sub 2@O@sub 3@(0001) Substrates, and the Roles of Silicon, Oxygen, and Nitrogen Vacancies in n-type GaN Grown by MBE J.E. Van Nostrand, Air Force Research Lab, J.S. Solomon, University of Dayton Research Institute, A. Saxler, Air Force Research Lab |
| 11:00am | EM-MoM9 Growth of GaN Thin Films and Device Structures on Silicon Wafers by Molecular Beam Epitaxy I.E. Berishev, D. Starikov, N. Medelci, A. Bensaoula, I. Rusakova, E. Kim, University of Houston |
| 11:20am | EM-MoM10 Photoluminescence and Heteroepitaxy of ZnO on Sapphire Substrate (0001) Grown by RF Magnetron Sputtering K.K. Kim, S.J. Park, Kwangju Institute of Science and Technology, Korea, J.-H. Song, H.-J. Jung, W.K. Choi, Korea Institute of Science and Technology |
| 11:40am | EM-MoM11 Characterization of a Very Thin Film: N2 Plasma Nitridation of GaAs (110) J.E. Hulse, D. Landheer, R. Krishnamurthy, S. Moisa, National Research Council of Canada |