| AVS 46th International Symposium | |
| Electronic Materials and Processing Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-MoA1 GaN-Based Diode Structures for Optoelectronic Applications in the Near Ultraviolet Range of the Spectrum D. Starikov, I.E. Berishev, N. Badi, N. Medelci, J.-W. Um, A. Bensaoula, University of Houston |
| 2:20pm | EM-MoA2 High Breakdown Voltage Au/Pt/GaN Schottky Diode J.I. Chyi, J.M. Lee, C.C. Chuo, G.C. Chi, National Central University, Taiwan, G. Dang, A.P. Zhang, X.A. Cao, M.M. Mshewa, F. Ren, S.J. Pearton, University of Florida, S.N.G. Chu, Bell Labs, Lucent Technologies, W.G. Wilson, Charles Evans and Associates |
| 2:40pm | EM-MoA3 Negative Electron Affinity and Electron Emission at Cesiated GaN and AlN Surfaces C.I. Wu, A. Kahn, Princeton University |
| 3:00pm | EM-MoA4 Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions R.J. Shul, L. Zhang, A.G. Baca, C.G. Willison, J. Han, Sandia National Laboratories, S.J. Pearton, F. Ren, University of Florida |
| 3:20pm | EM-MoA5 Schottky Diode Measurements of Dry Etch Damage in n- and p-type GaN X.A. Cao, A.P. Zhang, G. Dang, F. Ren, S.J. Pearton, University of Florida, R.J. Shul, L. Zhang, Sandia National Laboratories |
| 3:40pm | EM-MoA6 Process Development for Dry-etched Laser Facets on GaN L. Zhang, R.J. Shul, G.A. Vawter, C.G. Willison, C.Y. Gao, J. Han, Sandia National Laboratories, S.J. Pearton, University of Florida |
| 4:00pm | EM-MoA7 Photo-Assisted RIE of III-V Nitrides in BCl@sub 3@/Cl@sub 2@/Ar/N@sub 2@ N. Medelci, I.E. Berishev, D. Starikov, A. Bensaoula, University of Houston, M. Gonin, K. Fuhrer, A. Schultz, Ionwerks |
| 4:20pm | EM-MoA8 Effect of N@sub 2@ Discharge Treatment on AlGaN/GaN HEMT Ohmic Contact Using Inductively Coupled Plasma A.P. Zhang, G. Dang, X.A. Cao, F. Ren, S.J. Pearton, University of Florida, J.M. Van Hove, P.P. Chow, R. Hickman, J.J. Klaasen, SVT Associates |
| 4:40pm | EM-MoA9 In-Situ Plasmas Diagnostics for the Etchings of AlGaN/GaN Heterostructures H.S. Kim, G.Y. Yeom, SungKyunKwan University, South Korea, J.W. Lee, T.I. Kim, Samsung Advanced Institute of Technology, South Korea |