AVS 46th International Symposium
    Vacuum Metallurgy Division Wednesday Sessions
       Session VM-WeM

Paper VM-WeM9
The Effects of Electron Beam Assistance on the Properties of Ion Beam Deposited CN Thin Films

Wednesday, October 27, 1999, 11:00 am, Room 620

Session: Advanced Surface Treatments and Coatings
Presenter: Y.H. Kim, Yonsei University, Korea
Authors: Y.H. Kim, Yonsei University, Korea
D.Y. Lee, Yonsei University, Korea
I.K. Kim, Yonsei University, Korea
H.K. Baik, Yonsei University, Korea
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For the direct ion beam deposition process, the kinetic energy of ion beam have been considered as a main factor for the determination of the properties of resulting thin films. But we have investigated the effects of electron beam assistance on the properties of thin film during the ion beam deposition process of CN material. For the verification of the charge-enhanced chemical bonding, the properties of carbon nitride thin films deposited with and without electron beam assistance are compared. For the direct ion beam deposition process, negative carbon ion beam and positive nitrogen ion beam was used simultaneously. Total negative beam including negative carbon ion and electron can be emitted from the Cs ion bombardment on the graphite target. The filtering of electrons from the total negative beam by the transverse magnetic field is possible and the pure negative carbon ion beam was deposited with positive nitrogen ion beam for the less charge-enhanced chemical bonding process. The properties of DLC and CN thin films were discussed respectively by comparing the thin film growth with and without electron beam assistance. The properties of thin films were characterized by Raman spectroscopy, AES and XPS.