AVS 46th International Symposium
    Thin Films Division Wednesday Sessions
       Session TF-WeA

Paper TF-WeA8
P-type Transparent Conducting In@sub 2@O@sub 3@ - Ag@sub 2@O Thin Films Prepared by Reactive Electron Beam Evaporation Technique

Wednesday, October 27, 1999, 4:20 pm, Room 615

Session: Transparent Conductive Oxides
Presenter: A. Subrahmanyam, Indian Institute of Technology, India
Authors: J. Asbalter, Indian Institute of Technology, India
A. Subrahmanyam, Indian Institute of Technology, India
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The transparent and conducting oxide thin films are all, so far, n - type. In the present investigation we report the results of thin films of silver doped In@sub 2@O@sub 3@ prepared on glass substrates by reactive electron beam evaporation at a substrate temperature of 180@super o@ C (at a chamber pressure of 2.5x10@super -4@ milli bar with oxygen) which have shown p-type conductivity under specific conditions. The evaporation rate is varied by changing the current ( 30 - 100 mA) to the electron beam. The starting material is the mixture of In@sub 2@O@sub 3@ and Ag@sub 2@O powder (of purity 99.99%). The composition of Ag@sub 2@O in the starting material has been varied from 0 to 100 Weight%. The electrical and optical properties of the films have been studied. The p-type conductivity has been observed in the films prepared at 80:20 composition evaporated at the rate of 65 Å per minute. The mobility and resistivity are 8.2 cm@super 2@volt@Super -1@sec@super -1@ and 22.5 ohm cm respectively. These films show an optical transparency of 38% at 500 nm and have an optical band gap of 3.95 eV. These data are being analyzed to understand the physics of the p-type conduction.