AVS 46th International Symposium
    Thin Films Division Wednesday Sessions
       Session TF-WeA

Paper TF-WeA4
Influence of the Target-Substrate Distance on the Properties of ITO Films Prepared by rf Reactive Magnetron Sputtering

Wednesday, October 27, 1999, 3:00 pm, Room 615

Session: Transparent Conductive Oxides
Presenter: L.-J. Meng, Inst. Duperior de Eng. do Porto, Portugal
Authors: L.-J. Meng, Inst. Duperior de Eng. do Porto, Portugal
M.P. Dos Santos, Univ. Minho, Portugal
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ITO films have been deposited onto glass substrates by rf reactive magnetron sputtering. The distance between the target and the substrate has been changed from 50 mm until 100 mm. The x-ray diffraction shows that the film prepared at large target-substrate distance has a strong orientation along [440] direction, and as the distance decreases, the intensity of the [440] peak decreases and the intensity of [222] peak increases. The electrical resistivity of the ITO films decreases as the target-substrate distance get small. This variation could be related with the change of the orientation of the films, the film, which has strong [222] peak intensity, has low electrical resistivity. The transmittance of the ITO films decreases and the optical band gap move to low energy direction as the target-substrate distance becomes small. In this work, all these phenomena will be discussed.