Considerable efforts have been focused on depositing thin film tin-doped indium oxide (ITO) (thickness of 100-300 nm) with significantly reduced resistivity (lower than 1.0-1.5@Ao@10@super-4@ @ohm@cm) in order to accommodate the increasing technological demand for larger area flat panel displays with higher image quality. In this decade several breakthrough to deposit the low resistivity ITO with high reproducibility had been successfully carried out both for the evaporation-based and sputtering-based deposition processes applying quite different plasma techniques. As for e-beam evaporation (EB) processes, activation of the chemical reaction close to the substrate surface and low energy Ar@super+@ bombardment (10-30 eV) using tungsten electron emitters (EEIP) or an arc plasma generator (HDPE) were found to be effective for the low-resistivity ITO deposition. Whereas for the magnetron sputtering (SP) processes, lowering the sputtering voltage caused by lowering plasma impedance using the stronger magnetic field close to the cathode target or DC+RF technique was confirmed to be effective. Analyses on the crystallinity of the ITO films using XRD, FE-SEM, HREM and on chemical state of doped tin ions using ESCA, Transmission Mossbauer Spectra (TMS) were carried out to investigate how the deposition conditions affected the film structure and properties, and hence the reason for the low resistivity. It was clarified to be the key factors to deposit the very low resistivity ITO films that the doping efficiency of tin should be increased by decreasing the segregation at grain boundaries for the EB films, whereas the crystallinity should be improved by lowering the damages caused by high energy ion bombardments (more than 100 eV) during the SP deposition.