AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS3+EM-WeM

Paper SS3+EM-WeM6
Electronic Structure of the 3C-SiC(001)-c(4x2) Surface

Wednesday, October 27, 1999, 10:00 am, Room 604

Session: Surface Electronic Structure
Presenter: L. Duda, Universität Dortmund, Germany
Authors: L. Duda, Universität Dortmund, Germany
L.S.O. Johansson, Universität Dortmund, Germany
B. Reihl, Universität Dortmund, Germany
H.W. Yeom, University of Tokyo, Japan
S. Hara, Electrotechnical Laboratory Tsukuba, Japan
S. Yoshida, Electrotechnical Laboratory Tsukuba, Japan
Correspondent: Click to Email
We provide the first investigations of the electronic structure of the Si-rich 3C-SiC(100)-c(4x2) surface using angle-resolved photoemission and synchrotron radiation. The surface is found to be semiconducting. The Fermi level position was determined to be at 1.9 eV above the valence-band maximum. Three surface states are identified within the bulk band gap. We measured the dispersion of these states along the high-symmetry directions of the surface Brillouin zone (SBZ). The upper band at 1 eV binding energy and the third band at 2.6 eV are non-dispersive. The second band is located at 1.5 eV at the center of the SBZ and shows a weak dispersion of 0.3 eV in the @Gamma@-X direction, whereas, it is dispersionless in the other directions. We compare these results to calculated band structures.@footnote 1@ In addition, the comparison with experimental observed band structures of the 2x1 surface@footnote 2@ gives important new insight into the reconstruction behaviour of the SiC surface, supporting the close similarity of both reconstructions. @FootnoteText@ @footnote 1@ W. Lu, P. Krüger, J. Pollmann, Phys. Rev. Lett. 81 (1998) 2292 @footnote 2@ L. Duda, L. S. O. Johansson, B. Reihl, H. W. Yeom, S. Hara, S. Yoshida, submitted to Surface Science (1999).