AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS-WeP

Paper SS-WeP21
Investigations of the Effects of P and Ge on the Desorption of D@sub 2@ from Si(100) and Si(111)

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: J.L. Stepnowski, University of California, San Diego
Authors: J.L. Stepnowski, University of California, San Diego
C. Dougherty, University of California, San Diego
G.J. Batinica, University of California, San Diego
M.L. Jacobson, University of California, San Diego
M. Chiu, University of California, San Diego
B.M.H. Ning, University of California, San Diego
J.E. Crowell, University of California, San Diego
Correspondent: Click to Email
The desorption of D@sub 2@ from Si(100) covered with various concentrations of both P and Ge has been investigated using temperature programmed desorption (TPD). Chemical vapor deposition was used to prepare the surfaces. Phosphorus at different concentrations was deposited at 873K using phosphine as the molecular source gas, and separately, various Ge coverages were prepared by exposing the surface to digermane at approximately 160K. After each exposure, the crystal was flashed to 873K to desorb hydrogen. The resulting P and Ge surface coverage was determined by Auger Electron Spectroscopy. The P,Ge modified Si surface was then exposed to D atoms produced by cracking D@sub 2@ gas with a hot tungsten filament and then a TPD spectrum was taken. Previous studies in our laboratory found that addition of phosphorus alone shifts the @beta@1 desorption state to higher temperatures relative to clean Si(100) while the presence of only submonolayer germanium on the Si surface decreases the @beta@1 peak temperature. This investigation will detail the combined effect of P and Ge on the Si(100) surface. Furthermore, the combined system of P and Ge on Si(111) has been previously examined in our laboratory and a comparison of the effect of these additives on the desorption behavior of Si(100) versus Si(111) will also be presented.