AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS-WeP

Paper SS-WeP19
Study on Properties of Defects and Boron at the Si/SiO@sub 2@ Interface using Empirical Interatomic Potential Energy Function

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: J.-W. Kang, Chung-Ang University, Korea
Authors: J.-W. Kang, Chung-Ang University, Korea
H.-J. Hwang, Chung-Ang University, Korea
Correspondent: Click to Email
Properties of silicon/oxide interface were computed using novel interatomic potential-energy function that was recently developed@footnote 1@ for modeling the interactions between silicon and oxygen atoms. For boron-silicon interaction, we used the Stillinger-Weber (SW)-type interatomic potential with the repulsive part of the two-body term being splined to the Ziegler-Biersack-Littmart (ZBL) universal repulsive potential.@footnote 2@ For boron-oxygen, We used the Born-Mayer-Huggins potential.@footnote 3@ Effects of dangling bonds and oxygen clusters at SiO@sub 2@/Si interface and silicon vacancy and oxygen vacancy in the oxide film were calculated. We have investigated the SiO@sub 2@ evolution on the silicon surface with rich boron and various defects. The evolution of the structure at the Si/SiO@sub 2@ interface according to the presence of boron atom provided an overview of the behavior of boron dynamics at the Si/SiO@sub 2@. @FootnoteText@ @footnote 1@ T. Watanabe et al., Jpn. J. Appl. Phys. Vol.38 Part 2.No. 4A (1999) pp. L366-L369. @footnote 2@ J. W. Kang, E. S. Kang, H. J. Hwang, will be published in May, J. Kor. Phys. Soc. Vol. 34 (1999). @footnote 3@ J. M. Delaye, V. L-Achille, D. Ghaleb, J. Non-Cry. Solids, 210(1997) 234-242.