AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS-WeP

Paper SS-WeP18
Dynamical Behavior of Hydrogen Molecule on GaAs(001) Surface

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: M. Ohashi, JRCAT - ATP, Japan
Authors: M. Ohashi, JRCAT - ATP, Japan
M. Ozeki, JRCAT - ATP, Japan
J. Cui, JRCAT - ATP, Japan
Correspondent: Click to Email
Hydrogen plays important roles as an important reactant and a carrier gas in various surface processes of III-V compound semiconductors. However there are no sufficient data on dynamical behaviors of hydrogen on III-V compounds surface. Supersonic molecular-beam scattering enables us to bring valuable dynamical parameters such as reaction probability, reaction pathway, reaction kinetics, and activation energies of reaction steps. We have been studying in dynamical behaviors of hydrogen on GaAs(001) surface by supersonic molecular beam apparatus. We measured angular distributions of reflected beams, when hydrogen molecule was injected with 110 and -110 directions onto GaAs(001) 2x4 surface. The existence of trapping/desorption channel was clearly discovered and the depth of potential well of hydrogen molecule on GaAs(001) 2x4 surface was estimated 0.4 kcal/mol by the trajectory simulation of trapping probabilities. The angular distribution of reflected hydrogen molecule of trapping/desorption channels direct scattering was largely affected by the surface corrugation of GaAs(001) 2x4 surface. The experimental result was compared by classical trajectory simulation for this system. The experimental result agreed excellently with classical trajectory simulation. This indicated the important information of the energy exchange from translational to rotational modes was indicated. This work is supported by New Energy and Industrial Technology Development Organization (NEDO).